Abstract - The VWA 50014 AA is a distributed amplifier designed on a 0.15 μm pHEMT process. The device is capable of output voltage up to 8Vpp and has more than +23dBm of output power at saturation regime, up to 28GHz. It provides more than +21dBm of output power at 1 dB of gain compression, up to 20GHz.The linear gain is of 16dB from DC to 28GHz, with an excellent group delay. The design has been optimized to provide high efficiency. The supply current is as low as 200mA when operating with VD= +9V. This device needs an RF Output external bias-tee to bias the drain and an RF input external DCBlock.
Abstract - The VWA 5000056 AA is a power distributed amplifier designed on a 0.15 μm pHEMT process. The devices is capable of more than +27 dBm of output power at saturation regime, and provides more than 15 dB of gain from 1 to 20 GHz with less than 1 dB of flatness with an excellent group delay between 6-18 GHz in typical application. The design has been optimized to provide high efficiency, supply current is as low as 290 mA with Vd=+8V.
Abstract - The VWA 5000060 AA is a medium power amplifier designed on a 0.15 μm pHEMT process. The device is capable of +24dBm of output power at saturation regime. And up to +22dBm
of output power at 1 dB of gain compression. It provides up to 11 dB of linear gain from 2.5 to 5GHz. The supply current is as low as 180 mA when operating with VD=+4V.
