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Products

VectraWave’s mission is to develop MMIC solutions” up to 100GHz, using the best available processes in order to optimize cost, performances, power consumption and “small form factor packaging”, and addressing the Military, Satcom, Telecommunications/Optical, Wireless, and Industrial/Test & Measurements markets.

VectraWave RF/Microwave products offering includes:

  • MMIC (GaAs, GaN/SiC, InP) for medium and high power functions, as well as RFIC (CMOS/SiGe) for RF signal processing integration.
  • “Multi-Chip Modules” (MCM/SiP), using Surface Mount package technologies (QFN, Flanged, Lead Frame) as well as connectorized housings (SMA, K, GPPO, …).
  • RF Optical Assemblies.

Our range of MMIC, RFIC, EOIC products includes:

  • Low Noise, Driver, Ultra Wide Band, Medium Power, High Power Amplifiers
  • Analog or Digital Attenuators and Phase Shifters
  • Multi Function Chip MFC
  • Coders
  • Trans-Impedance Amplifiers

[product_table rows_per_page=”12″ scroll_offset=”70″]

  • ATT : Attenuator
  • GBA : Gain Block Amplifier
  • HPA : High Power Amplifier
  • LNA : Low Noise Amplifier
  • MFC : Multi Function Chip
  • MPA : Medium Power Amplifier
  • PHSH : Phase Shifter
  • TIA : Trans Impedance Amplifier
  • UWBA : Ultra Wide band Amplifier

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VWA5000014AA

Abstract - The VWA 50014 AA is a distributed amplifier designed on a 0.15 μm pHEMT process. The device is capable of output voltage up to 8Vpp and has more than +23dBm of output power at saturation regime, up to 28GHz. It provides more than +21dBm of output power at 1 dB of gain compression, up to 20GHz.The linear gain is of 16dB from DC to 28GHz, with an excellent group delay. The design has been optimized to provide high efficiency. The supply current is as low as 200mA when operating with VD= +9V. This device needs an RF Output external bias-tee to bias the drain and an RF input external DCBlock.

VWA5000015AB

Abstract - The VWA 5000015 AB is a wide band distributed amplifier designed on a 150nm pHEMT process that operates up to 31 GHz, with flat group delay. The device is capable of more than +19 dBm saturated output power, and provides more than 13dB of gain from DC to 27 GHz with less than 1 dB of flatness. The MMIC integrates an output power detector for monitoring function. A 24 dB tap coupler delivers the image of the output level on a dedicated pad, and a peak detector is available on the die. Connecting the input of the peak detector to the tap coupler output will generate a DC signal, at the output of the detector, this help for monitoring the output signal level in the RF spectrum. A reference diode is also available for temperature reference information of the detector function.

VWA5000025AA

Abstract - The VWA 50025 AA is a distributed amplifier designed on a 0.15μm pHEMT process. The device is capable of more than +16dBm of output power at saturation regime, up to 40GHz. It provides more than +14dBm of output power at 1 dB of gain compression, up to 40GHz.The linear gain is of 11dB from DC to 40GHz, with an excellent group delay. The design has been optimized to provide high efficiency. The supply current is as low as 100mA when operating with VD= +8V. This device needs an RF Output external bias-tee to bias the drain and an RF input external DCBlock.

VWA5000042AA

Abstract - The VWA 5000042 AA is a 3 Stages analog High Power MMIC amplifier operating in the frequency range 8 to 12GHz. The device is a cascaded 3 stages amplifier designed in 0.25μm pHEMT process. The device is capable of 12W output power at Psat, and provides 25dB of large gain from 8 to 12 GHz with less than 1dB of Gain variation. The design has been optimized to provide high efficiency, supply current is 4.5A with Vdd=+8.5V, when delivering 12W output power. S2P file can be provided for system design simulation. GDSII file is also available for mechanical design.

VWA5000048AA

Abstract - The VWA 5000048 AA is a low noise amplifier MMIC operating in the frequency range 8 to 12 GHz. The device has a noise figure of 1.1 dB with a minimum gain of 32 dB. It is manufactured on a PHEMT Technology and is especially suited for radar and for telecommunication applications.

VWA5000049AA

Abstract - The VWA 5000049 AA integrate: - Transmit and receive switches - LNA, MPA, inter-stage amplifiers - 6-bit phase shifter - 5-bit attenuator - Digital control logic The digital control logic allows for parallel data input, so phase shifter and attenuator may be changed instantaneously.

VWA5000052AA

Abstract - The VWA 5000052 AA is a distributed amplifier designed on a 0.15μm pHEMT process. The device is capable of more than +21dBm of output power at saturation regime, up to 40GHz, and more than +17dBm of output power at 1 dB of gain compression, up to 34GHz. It provides more than 12dB of linear gain from DC to 44 GHz with a positive slope through 40GHz. This device can provide up to 11 dB gain up through 50GHz when operating with VD=+ 6V, with an excellent group delay. The Design has been optimized to provide high efficiency. The supply current is as low as 170mA when operating with VD=+6V.

VWA5000053AA

ABSTRACT - The VWA 5000053 AA is a double distributed amplifier designed on a 0.15μm pHEMT process. Each amplification lines are capable of more than +21dBm of output power at saturation regime, up to 40GHz. And more than +17dBm of output power at 1 dB of gain compression, up to 34Ghz. It provides more than 12dB of linear gain from DC to 44GHz with a positive slope of +0.0375dB/GHz, up to 40GHz. This device can provide up to 11dB gain up to 50GHz when operating with VD=+ 6V, with an excellent group delay. The Design has been optimized to provide high efficiency. The supply current is as low as 140mA when operating with VD=+5V. S2P file can be provided for system design simulation. DXF file is available for mechanical design. Evaluation board available on request.

VWA5000054AA

Abstract - The VWA 5000054 AA is a distributed amplifier designed on a 0.15μm pHEMT process. The device includes an internal biasing circuit which can be used to feed directly the drain current, as an alternative to bias the drain from the HF-Output access. Depending on the desired low cut off frequency, external components can be added to ensure operations started from 30KHz to 2GHz through up to 40GHz. The device includes also an embedded output signal detector and an embedded input gate biasing circuit which can be used to reduce the power consumption in many linear receiving amplifier chains. It is capable of more than +21dBm of output power at saturation regime, up to 40GHz. And more than +17dBm of output power at 1 dB of gain compression, up to 34GHz. It provides more than 12dB of linear gain from DC to 44GHz with a positive slope of +0.0375dB/GHz, up to 40GHz. This device can provide up to 10dB gain up to 50GHz with an excellent group delay. Optimized biasing configurations are proposed depending on the input power level pattern.

VWA5000055AA

Abstract - The VWA 5000055 AA, is a wide band GaAs MMIC. - 5-bit attenuator - Digital control logic The digital control logic allows for parallel data input, so attenuation value may be changed instantaneously. This broadband Attenuator has an LSB of 0.9 dB, and controlled by 5 digital binary inputs, compatible with LVCMOS / TTL levels. This device uses a single -7.5 V Bias supply voltage.